YSMR8Q512E
Radiation-hardened memories | Digital logic ICs
Available substitutes and cross-reference table — on request
Overview
The product is an anti-radiation memory with performance comparable to the UT8Q512E model. It features a 4M capacity, 512Kx8 configuration, 3.3V voltage, 20ns access time, and a total dose of 100krad(Si). For detailed specifications, please refer to the data sheet.
Key parameters
| Total ionizing dose (krad(Si)) | 100 |
| Package | CFP36 |
| Capacity | 4M |
| Configuration | 512Kx8 |
| Voltage (V) | 3.3 |
| Access time (ns) | 20 |
| SEL threshold (MeV·cm²/mg) | 75 |
Supplied on request
- Datasheet and full parameter sheet (PDF)
- Cross-reference table: western / Russian analog → this model
- Quality grades YC / YB / QY / CH — per customer requirement
- Package options and radiation test data
- Lead time and price for the annual quantity
Request a quote
Enter quantity to prepare an email; we reply within one business day. Or write to [email protected]
Need a full datasheet or a substitute suggestion? Write to us with the model YSMR8Q512E and your annual quantity.