YSMR512K40
Radiation-hardened memories | Digital logic ICs
Available substitutes and cross-reference table — on request
Overview
This product is an anti-radiation memory with a capacity of 20M and a configuration of 512Kx40, suitable for data storage in harsh environments. It has a total dose of 100 krad(Si), is packaged in a CQFP84 form factor, operates at a voltage of 3.3V, and has an access time of 20ns. The SEL threshold is as high as 75 MeV·cm²/mg. For detailed parameter information, please refer to the data sheet.
Key parameters
| Total ionizing dose (krad(Si)) | 100 |
| Package | CQFP84 |
| Capacity | 20M |
| Configuration | 512Kx40 |
| Voltage (V) | 3.3 |
| Access time (ns) | 20 |
| SEL threshold (MeV·cm²/mg) | 75 |
Supplied on request
- Datasheet and full parameter sheet (PDF)
- Cross-reference table: western / Russian analog → this model
- Quality grades YC / YB / QY / CH — per customer requirement
- Package options and radiation test data
- Lead time and price for the annual quantity
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