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YSMR28F256LVQLE-D(F)

Radiation-hardened memories
Radiation-hardened memories | Digital logic ICs
Available substitutes and cross-reference table — on request

Overview

The model YSMR28F256LVQLE-D-F is an irradiation-resistant memory, comparable to the UT28F256LVQLE. It has a capacity of 256K with a 32Kx8 configuration, suitable for a 3.3V voltage environment, with an access time of 65ns. For detailed parameter specifications, please refer to the data sheet.

Key parameters

Total ionizing dose (krad(Si))100
PackageCDIP28
Capacity256K
Configuration32Kx8
Voltage (V)3.3
Access time (ns)65
SEL threshold (MeV·cm²/mg)99.8

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