YSFGPA35-0810Q
Overview
This product is a microwave transistor with an operating frequency range of 8.5-9.6GHz, a power gain of 7.2dB, a saturated output power of 47.2dBm, and a power added efficiency of 42%. For detailed specifications, please refer to the data sheet. Fact: Model: YSFGPA35-0810Q Category: Microwave Transistor Comparable Model: None Quality Grade: Not specified Data Sheet: Available Existing Parameters: Operating Frequency (GHz) = 8.5-9.6; Power Gain (dB) = 7.2; Saturated Output Power (dBm) = 47.2; Power Added Efficiency (%) = 42; Operating Voltage (V) = 28
Key parameters
| Operating frequency (GHz) | 8.5-9.6 |
| Power gain (dB) | 7.2 |
| Saturated output power (dBm) | 47.2 |
| Power added efficiency (%) | 42 |
| Operating voltage (V) | 28 |
Supplied on request
- Datasheet and full parameter sheet (PDF)
- Cross-reference table: western / Russian analog → this model
- Quality grades YC / YB / QY / CH — per customer requirement
- Package options and radiation test data
- Lead time and price for the annual quantity
Request a quote
Enter quantity to prepare an email; we reply within one business day. Or write to [email protected]
Need a full datasheet or a substitute suggestion? Write to us with the model YSFGPA35-0810Q and your annual quantity.