GM2245M
Radiation-hardened CMOS image sensors | Optoelectronics & satellite parts
Available substitutes and cross-reference table — on request
Overview
This product is an anti-radiation CMOS image sensor with a 1024×1024 array size, pixel size of 15 x 15μm, readout noise ≥60e⁻, and power consumption ≤500mW. The total dose reaches 100 krad(Si), with a Single Event Latch (SEL) threshold of 75 MeV·cm²/mg. For specific parameters, please refer to the data sheet.
Key parameters
| Total ionizing dose (krad(Si)) | 100 |
| SEL threshold (MeV·cm²/mg) | 75 |
| Array size | 1024×1024 |
| Pixel size (μm) | 15 x 15 |
| Read noise (e-) | ≥60 |
| Power consumption (mW) | ≤500 |
Supplied on request
- Datasheet and full parameter sheet (PDF)
- Cross-reference table: western / Russian analog → this model
- Quality grades YC / YB / QY / CH — per customer requirement
- Package options and radiation test data
- Lead time and price for the annual quantity
Request a quote
Enter quantity to prepare an email; we reply within one business day. Or write to [email protected]
Need a full datasheet or a substitute suggestion? Write to us with the model GM2245M and your annual quantity.